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NEC Electronics Announces New Automotive Intelligent Power Device

Device Enables Compact, Light Weight Electronic Control Units Through Use of Semiconductor Switches


pr05-11-28_webDuesseldorf, Germany — 28 Nov 2005

To further strengthen its automotive semiconductor business, NEC Electronics (Europe) GmbH today announced the μPD166007, an intelligent power device (IPD) for use in on-board electronic control units (ECUs) supporting applications such as headlights, anti-lock braking systems and air conditioners.  With this new device, the mechanical switches or relays conventionally used to control these units have been replaced by semiconductors to enable smaller and lighter ECUs with improved on/off control and high reliability.  This innovation frees cabin space and contributes to a lower environmental impact by reducing engine load.  Further environmental benefit is achieved through the μPD166007 IPD’s lead-free design.

In recent years, the number of electronic devices employed in vehicles has increased at a remarkable rate, creating a corresponding increase in on-board ECUs.  To help reduce the demand these ECUs place on the engine, higher performance and more reliable switches are needed.  To meet these requirements, NEC Electronics’ μPD166007 IPD allows more compact ECU design for better integration into vehicle cabins.  Additionally, as it uses semiconductors, the μPD166007 IPD doesn’t suffer from the reliability issues that effect mechanical relays due to contact wear.

The device features a specific switching control to limit rapid fluctuations in output current.  This reduces the electromagnetic noise and improves ECU performance.  The μPD166007 IPD supports a current sensing function to monitor current flow during normal operation, and a diagnosis function to detect overcurrent and overheating.  Support for these features allows an accurate grasp of the output status and the detection of abnormalities.

The μPD166007 uses a stacked construction in a multi-chip package (MCP).  The device also features vertical type field-effect transistors (FET) using a UMOS trench cell structure.  This structure has a solid track record for low resistance and low heat generation, and with an on-resistance of 10 mW(see note), the μPD166007 is ideal for use in on-board control units.  The device comes in a compact TO-252 package with 5 external pins in line with JEDEC standards.

Availability

Samples of the μPD166007 IPD are available now.  Mass production of approximately 1 million units per month is scheduled to start in the second quarter of FY2006.

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Note: On-resistance refers to the resistance when a MOSFET operates in "on" state.  The lower the on-resistance, the larger the current flowing through the MOSFET.




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