NEC Electronics presents ultra low resistance PowerMOSFET

New UMOS-4 technology boosts power applications

NEC Electronics Corporation and its subsidiary in Europe, NEC Electronics (Europe) GmbH, introduce a new series of PowerMOSFET in advanced UMOS-4 technology. NEC’s well known NP-series has been extended by the development of 15 new products, targeting markets for low voltage devices, like the automotive sector. The products are available in popular TO-252 and TO-263 compliant packages and feature ultra-low resistance, high current performance and temperature stability up to 175 °C.

NEC Electronics is heading for technology leadership with its new PowerMOSFET NP-series. These devices make the most of the company's innovative UMOS-4 trench technology and combine it with an advanced packaging solution. UMOS-4 is a new-generation UMOS process technology. With an ultra-fine design rule of 0.25 µm, the process achieves a cell density of well over 180 Mcells/inch2.

The main product features are ultra-low RDS(ON), down to 1.7 mΩ max. (@ 30 V, TO-263ZP), benchmark setting high-current performance up to 110A and temperature stability up to 175°C. The products cover the low voltage range (30 V, 40 V and 55 V).

These technological features are combined with a new package concept. In addition to standard TO-252 and TO-263 packages, the NP-series now includes devices in NEC’s newly developed advanced TO-263 / TO-263ZP package, where the number of source bond wires has been increased from 2 to 4. Still retaining the standard TO-263 footprint, this new approach allows higher current ratings and lower resistances.

The new products are NEC Electronics response to increasing demand for supply current in high-power applications like integrated starter generators (ISG), electrical power steering (EPS) and fan control and also in standard applications like DC-DC converters and motor control.

Further information on PowerMOSFET products

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