NEC Electronics Introduces Industry’s First Pseudo Static Random Access Memory (PSRAM) Device Standardized for COSMORAM Rev.3

128-megabit Memory Storage for Mobile Handsets Delivers Superior Performance and Low Power Consumption

NEC Electronics Corporation and its subsidiaries in the United States and Europe, NEC Electronics America, Inc., and NEC Electronics (Europe) GmbH, today introduced the industry’s first Pseudo Static Random Access Memory (PSRAM)* device designed in accordance with Common Specifications for Mobile RAM (COSMORAM) Rev.3, a memory interface standard developed and promoted jointly by Toshiba Corporation, Fujitsu Limited, and NEC Electronics for the mobile handset market.

“The rapid evolution of mobile handsets with advanced functions such as music playback, digital image processing, games and videoconferencing has spawned a need for memory devices that offer a combination of superior performance with low power consumption,” stated Masazumi Ikebe, general manager, System Memory Division. “By developing our latest PSRAM solution in line with the COSMORAM Rev.3 standard, NEC Electronics aims to help system developers meet these demands, while achieving faster time-to-market and lower system costs.”

NEC Electronics’ µPD46128953 device has a 128-megabit memory capacity and achieves a stable operating frequency of 83MHz during burst mode** while maintaining a low operating voltage of 1.8V. This performance was made possible by NEC Electronics’ development of a new type of delay circuit that regulates the internal pulse mechanism. A 32-bit high-speed I/O interface doubles previous data transmission speeds achieved with 16-bit interfaces, enabling rapid communication with the handset’s central processing unit (CPU). Three driver output settings allow system developers to adjust the level of noise, setting the optimal configuration for their application. In standby power mode only necessary memory blocks remain operational, enhancing power savings. The device is available in a 127-pin plastic fine pitch ball grid array (FBGA) package.

The µPD46128953 is the industry’s first product to be standardized to COSMORAM Rev.3, the specifications agreed upon by Toshiba, Fujitsu and NEC Electronics in September 2004. The three companies have collaborated on random access memory since 1998, and introduced the first COSMORAM standard in 2002. As a result of these agreements, customers can use PSRAM solutions from the three companies interchangeably, eliminating the need for separate product designs for the memory portion of the handset, and ensuring steady procurement as the companies can act as alternative supply sources for each other.

Availability
Samples of the µPD46128953 will be available in December. Mass production is scheduled to begin in March 2005, and monthly production volumes are expected to reach 1 million units per month. Availability is subject to change.

 For technical details of these new devices please check spec sheet .

* Pseudo Static Random Access Memory (PSRAM)
A type of RAM device that uses Dynamic Random Access Memory (DRAM) cells to achieve high density at inexpensive cost structures, combined with an external interface that is compatible with asynchronous Static Random Access Memory (SRAM) to facilitate design. PSRAM is an ideal alternative memory solution to SRAM for mobile handsets, which are becoming increasingly feature-rich, requiring higher memory densities and higher performance.

** Burst mode
A high-speed data transmission mode in which data read/write is synchronized to an external CPU clock.

All products and proper names mentioned here are trademarks or registered trademarks of their respective firms.

###

Download PDF file(s):

• English version

• German version

• Italian version

###

Media Contact(s)

Information in the press releases, including product prices and specifications is current on the date of the press announcement, but is subject to change without prior notice.