Please note that JavaScript and style sheet are used in this website,
Due to unadaptability of the style sheet with the browser used in your computer, pages may not look as original.
Even in such a case, however, the contents can be used safely.
DÜSSELDORF (Germany) 18 Jan 2010NEC Electronics Europe today announced the expansion of its NP-Series product portfolio with the addition of new low-voltage Power MOSFET devices with ultra-low on-state resistance RDS(on) and low gate charge QG . Based on NEC Electronics’ SuperJunction1 technology, the new products feature an outstanding figure of merit (FOM) and thus minimize switching losses and increase system efficiency.
Compared with NEC Electronics’ own UMOS-4 trench technology, the SuperJunction1 technology reduces the gate charge and the input capacity by over 40% while maintaining the extremely low on-resistance RDS(on).
The new NP180N04TUJ and NP180N055TUJ Power MOSFETs features an advanced architecture and advanced package designed to manage heat dissipation and reduce power loss with one of the lowest markets RDS(on)max levels, 1.5 mΩ and 2.3 mΩ, respectively. Operating at 40V or 55V voltage drain source VDS and ID = 180 A, the new devices meet the demands of high performance application such as Electric Power Steering (EPS) or Integrated Starter Generators (ISG) that require high current capability.
The ISG is a key component concerning future demands on the vehicle such as the constantly growing number of electric devices or the increase of power efficiency. Apart from offering conventional starter and generator functions with one electrical machine, the ISG can be used to implement additional features such as start/stop, boost functions or recuperative braking.
Currently, eight devices are available with SuperJunction1 process technology, achieved by an ultra-fine design rule of 0.35µm. Four devices under development also feature NEC Electronics’ advanced TO-263-7 pin package, which support high drain current rating up to 180A. Like all members of the NP Series, the new devices are qualified to AEC-Q101, support up to 175 °C channel temperature and are lead free with tin-plated leads.
With its advanced process and packaging, NEC Electronics’ new SJ1 PowerMOSFETs help designers to overcome actual challenges to hit their required design targets.
Availability
Samples and product information of the new SJ1 Power MOSFETs, NP160N04TUJ, NP180N04TUJ, NP160N055TUJ and NP180N055TUJ, are available upon request. Start of mass production is scheduled for May 2010. For more information about the new devices and other power management devices from NEC Electronics visit www.eu.necel.com/mosfet. (Sample availability is subject to change without notice).
Device Specification Table:

Table 1: Overview of the SJ1 Power MOSFETs for automotive application
About NEC Electronics (Europe) GmbH
NEC Electronics (Europe) GmbH, headquartered in Duesseldorf, Germany, is a leading developer and supplier of semiconductor products in Europe. Committed to meeting customers' cost, performance and time-to-market requirements, the company offers solutions ranging from standard products to system-on-a-chip (SoC) solutions, as well as customized products for next-generation designs. Our customers also benefit from state-of-the-art manufacturing from the global production network of our parent company, NEC Electronics Corporation. Additionally, NEC Electronics (Europe) GmbH is the exclusive European sales and marketing channel of LCD modules from NEC LCD Technologies Ltd.. For more information visit http://www.eu.necel.com.
| LANGUAGE VERSIONS |
| MEDIA CONTACTS |
| |||||||||||||||